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IEEE Electeon Device Letters February 2003 Vol 24 Num 2 | eBay
IEEE Electeon Device Letters February 2003 Vol 24 Num 2 | eBay

PDF) Correlation Between Electrical Performance and Gate Width of GaN-based HEMTs
PDF) Correlation Between Electrical Performance and Gate Width of GaN-based HEMTs

Kan-Hao Xue Publication
Kan-Hao Xue Publication

IEEE Electron Device Letters information for authors
IEEE Electron Device Letters information for authors

PDF) Lo, S.-H , Buchanan, D. A. , Taur, Y. & Wang, W. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs. IEEE Electron Device Lett. 18, 209-211
PDF) Lo, S.-H , Buchanan, D. A. , Taur, Y. & Wang, W. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs. IEEE Electron Device Lett. 18, 209-211

IEEE Electron Device Letters · OA.mg
IEEE Electron Device Letters · OA.mg

High Performance Monolithically Integrated GaN Driving VMOSFET on LED
High Performance Monolithically Integrated GaN Driving VMOSFET on LED

IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 9, SEPTEMBER
IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 9, SEPTEMBER

IEEE Electron Device Letters Referencing Guide · IEEE Electron Device Letters citation (updated Jun 01 2023) · Citationsy
IEEE Electron Device Letters Referencing Guide · IEEE Electron Device Letters citation (updated Jun 01 2023) · Citationsy

Electron Device Letters - IEEE Electron Devices Society
Electron Device Letters - IEEE Electron Devices Society

Articles - Nano Electronics
Articles - Nano Electronics

Electron Device Letters - IEEE Electron Devices Society
Electron Device Letters - IEEE Electron Devices Society

PDF) High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
PDF) High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate

PDF) All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology
PDF) All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology

Glasgow Microelectronics 🏴󠁧󠁢󠁳󠁣󠁴󠁿🇪🇺🇬🇧 on Twitter: "@hadihei @siming_zuo @IEEEEDS @KiaNazarpour @UofGEngineering Another great Sunday morning 😊 Great to see our paper image has been featured at the cover front page of IEEE Electron
Glasgow Microelectronics 🏴󠁧󠁢󠁳󠁣󠁴󠁿🇪🇺🇬🇧 on Twitter: "@hadihei @siming_zuo @IEEEEDS @KiaNazarpour @UofGEngineering Another great Sunday morning 😊 Great to see our paper image has been featured at the cover front page of IEEE Electron

Back cover]
Back cover]

Publications - IEEE Electron Devices Society
Publications - IEEE Electron Devices Society

PDF] IEEE Electron Device Letters information for authors by · 10.1109/led.2017.2701659 · OA.mg
PDF] IEEE Electron Device Letters information for authors by · 10.1109/led.2017.2701659 · OA.mg

An all-electrical floating-gate transmission line model technique for measuring source resistance in - Electron Devices, IEEE Tr
An all-electrical floating-gate transmission line model technique for measuring source resistance in - Electron Devices, IEEE Tr

IEEE Electron Devices Society - This month, the Cover Article for the IEEE Electron Device Letters is on 3D NOR flash with single-crystal silicon channel. Click to read, https://bit.ly/3ssMecZ Please enjoy this
IEEE Electron Devices Society - This month, the Cover Article for the IEEE Electron Device Letters is on 3D NOR flash with single-crystal silicon channel. Click to read, https://bit.ly/3ssMecZ Please enjoy this

IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 7
IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 7

IEEE Electron Device Letters template - For Authors
IEEE Electron Device Letters template - For Authors

A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode
A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode

Publications - IEEE Electron Devices Society
Publications - IEEE Electron Devices Society